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RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
March 2006
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
Features
Single positive-supply operation with low power and
General Description
The RMPA0965 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.
shutdown modes 40% CDMA/WCDMA efficiency at +28 dBm average output power 52% AMPS mode efficiency at +31 dBm output power Lead-free RoHS compliant 3 x 3 x 1mm leadless package Internally matched to 50 Ohms and DC blocked RF input/output Meets CDMA2000-1XRTT/WCDMA performance requirements Meets HSDPA performance requirements
Device
Functional Block Diagram
(Top View)
MMIC Vcc1 1 RF IN 2 Vmode 3 DC BIAS CONTROL Vref 4 INPUT MATCH OUTPUT MATCH 8 Vcc2 7 RF OUT 6 GND 5 GND
(paddle ground on package bottom)
(c)2006 Fairchild Semiconductor Corporation
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RMPA0965 Rev. J
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
Absolute Ratings1
Symbol
Vcc1, Vcc2 Vref Vmode Pin TSTG Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Parameter
Value
5.0 2.6 to 3.5 3.5 +10 -55 to +150
Units
V V V dBm C
Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol Parameter Min
824 29 30 29 28 16 40 9 18 470 130 -50 -52 -60 -70 30 52 2.0:1 4 -137 2.5:1 dB dBm/Hz Po +28dBm; 869 to 894MHz -30 -60 10:1 85 60 5 1 dBc dBc C mA mA A Vmode 2.0V Po +28dBm No applied RF signal. Po +28dBm Load VSWR 5.0:1 No permanent damage.
Typ
Max
849
Units
MHz dB dB dB dBm dBm % % % mA mA dBc dBc dBc dBc dB %
Comments
f Operating Frequency CDMA Operation SSg Small-Signal Gain Gp Power Gain Po PAEd Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm High Power Total Current Low Power Total Current Adjacent Channel Power Ratio 885KHz Offset 1.98MHz Offset
Itot
ACPR1 ACPR2
Po = 0dBm Po = +28dBm; Vmode = 0V Po = +16dBm; Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode 2.0V, Vcc = 1.5V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V IS-95 A/B Modulation Po = +28dBm; Vmode = 0V Po = +16dBm; Vmode 2.0V Po = +28dBm; Vmode = 0V Po = +16dBm; Vmode 2.0V Po = +31dBm Po = +31dBm
AMPS Operation Gp Gain PAEa Power-Added Efficiency (analog) General Characteristics VSWR Input Impedance NF Noise Figure Rx No Receive Band Noise Power 2fo-5fo Harmonic Suppression3 Spurious Ruggedness w/ Load Mismatch3 Tc Case Operating Temperature DC Characteristics Iccq Quiescent Current Iref Reference Current Icc(off) Shutdown Leakage Current S Outputs2, 3
-30
8 5
Notes: 1. All parameters met at Tc = +25C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design.
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RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
Performance Data
RMPA0965 Cellular 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
35 34 33 32 -40 -42 -44
RMPA0965 Cellular 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
ACPR1 (dBc)
824 836.5 849
-46 -48 -50 -52 -54 -56 -58 -60 824 836.5 849
Gain (dB)
31 30 29 28 27 26 25
Frequency (MHz)
Frequency (MHz)
RMPA0965 Cellular 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
45 44 43 42 -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 836.5 849
RMPA0965 Cellular 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
PAE (%)
41 40 39 38 37 36 35 824
ACPR2 (dBc)
824
836.5
849
Frequency (MHz)
Frequency (MHz)
RMPA0965 Cellular 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
500 490 480 470
Icc (mA)
460 450 440 430 420 410 400 824 836.5 849
Frequency (MHz)
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RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal down to 1.5V, power-added efficiency is more than doubled from 9.5 percent to nearly 18 percent (Vcc = 1.5V) while maintaining a typical ACPR1 of -52dBc and ACPR2 of less than -61dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power.
Recommended Operating Conditions
Symbol
f Vcc1, Vcc2 Vref Supply Voltage Reference Voltage (Operating) (Shutdown) Bias Control Voltage (Low-Power) (High-Power) Linear Output Power (High-Power) (Low-Power) Case Operating Temperature -30
Parameter
Operating Frequency
Min
824 3.0 2.7 0 1.8 0
Typ
3.4 2.85
Max
849 4.2 3.1 0.5 3.0 0.5 +28 +16 +85
Units
MHz V V V V V dBm dBm C
Vmode
2.0
Pout
Tc
DC Turn-On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16 dBm) Low-Power: Vmode = 2V (Pout < 16 dBm)
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RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
Evaluation Board Layout
1 5 6 3 6 8
2
0965 XYTT
4
7 5
Materials List
Qty
1 2 7 Ref 2 2 2 1 1 1 A/R A/R
Item No.
1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 10
Part Number
G657691-1 V1 #142-0701-841 #2340-5211TN F100001 GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K GRM39X7R331K50V SN63 SN96 PC Board
Description
SMA Connector Terminals Assembly, RMPA0965 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) 330 pF Capacitor (0603) Solder Paste Solder Paste
Vendor
Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Murata Indium Corp. Indium Corp.
Evaluation Board Shematic
3.3 F Vcc1 SMA1 RF IN Vmode Vref 4 1000 pF 0.1 F 50 Ohm TRL 3 1000 pF 1 2 330 pF 8 50 Ohm TRL 3.3 F Vcc2 SMA2 RF OUT
0965 XYTT
7
5,6 9 (package base)
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RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
Package Outline
I/O 1 INDICATOR 1 TOP VIEW 8
2 3.00 -.050 mm SQ. 3 4
+.100
7
0965 XYTT
FRONT VIEW
6 5
TT Y X 965 0
1.10mm MAX.
4X R.20mm
4 BACK SIDE SOLDER MASK 3
5 0.40mm 6 2.65mm
2 9 1.40mm BOTTOM VIEW
7
0.40mm 0.10mm
0.40mm 0.10mm
SEE DETAIL A 0.80mm
1
8 0.175mm DETAIL A TYP.
Signal Descriptions
Pin No.
1 2 3 4 5 6 7 8
Symbol
Vcc1 RF In Vmode Vref GND GND RF Out Vcc2 RF Input Signal
Description
Supply Voltage to Input Stage High-Power/Low-Power Mode Control Reference Voltage Ground Ground RF Output Signal Supply Voltage to Output Stage
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RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within 7 days of removal from the dry pack. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
260
Ramp-Up R ate 3 C/sec max
Peak tem p 260 +0/-5 C 10 - 20 sec
Temperature (C)
217 200
Time above li quidus temp 60 - 150 sec
150
Preheat, 150 to 200 C 60 - 180 sec
100
Ramp-Up R ate 3 C/sec max
50 25
Time 25 C/sec t o peak tem p 6 mi nutes max
Ramp-Do wn Rate 6 C/sec max
Time (Sec)
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RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdgeTM Power Amplifier Module
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDiS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18
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